A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifer

A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated elec-tronic devices with a 0.15-l m CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed togenerate a stable boosted voltage whose level exceeds over...

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Published inCurrent applied physics pp. 25 - 30
Main Authors Ki-Chul Chun, Jae-Yoon Sim, Hongil Yoon, Hyun-Seok Lee, Sang-Pyo Hong, Kyu-Chan Lee, Jei-Hwan Yoo, Dong-Il Seo
Format Journal Article
LanguageKorean
Published 한국물리학회 01.02.2004
Subjects
물리학
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Summary:A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated elec-tronic devices with a 0.15-l m CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed togenerate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-linebias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current senseamplier with dual-path current sensing scheme is proposed to obtain the stableI-to-V gain as well as to improve the low-voltage margin. KCI Citation Count: 0
Bibliography:G704-001115.2004.4.1.014
ISSN:1567-1739
1878-1675