Si 1-x Ge x Positive Feedback Field-effect Transistor with Steep Subthreshold Swing for Low-voltage Operation

• Published in: Journal of semiconductor technology and science Vol. 17; no. 2; pp. 216 - 222
• Main Authors: Hwang, Sungmin, Kim, Hyungjin, Kwon, Dae Woong, Lee, Jong-Ho, Park, Byung-Gook
• Format: Journal Article
• Language: Korean
• Published: 2017
• Subjects: positive feedback; Low power devices; field-effect transistor; steep subthreshold slope

The most prominent challenge for MOSFET scaling is to reduce power consumption; however, the supply voltage ($V_{DD}$) cannot be scaled down because of the carrier injection mechanism. To overcome this limit, a new type of field-effect transistor using positive feedback as a carrier injection mechan...