Partially-insulated MOSFET (PiFET) and Its Application to DRAM Cell Transistor

In this article, we evaluated the structural merits and the validity of a partially insulated MOSFET (PiFET) through the fabrication of prototype transistors and an 80 nm 512M DDR DRAM with partially-insulated cell array transistors (PiCATs). The PiFETs showed the outstanding short channel effect im...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 6; no. 1; pp. 30 - 37
Main Authors Oh, Chang-Woo, Kim, Sung-Hwan, Yeo, Kyoung-Hwan, Kim, Sung-Min, Kim, Min-Sang, Choe, Jeong-Dong, Kim, Dong-Won, Park, Dong-Gun
Format Journal Article
LanguageKorean
Published 2006
Subjects
PiFET
PiCAT
self-induced halo region
PiOX
partial SOI
self-limiting shallow junction
DRAM
Online AccessGet full text

Cover

More Information
Summary:In this article, we evaluated the structural merits and the validity of a partially insulated MOSFET (PiFET) through the fabrication of prototype transistors and an 80 nm 512M DDR DRAM with partially-insulated cell array transistors (PiCATs). The PiFETs showed the outstanding short channel effect immunity and off-current characteristics over the conventional MOSFET, resulting from self-induced halo region, self-limiting SID shallow junction, and reduced junction area due to PiOX layer formation. The DRAM with PiCATs also showed excellent data retention time. Thus, the PiFET can be a promising alternative for ultimate scaling of planar MOSFET.
Bibliography:KISTI1.1003/JNL.JAKO200627543140395
ISSN:1598-1657