Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 11S
• Main Authors: Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.11.2018

In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an important role in obtaining good electrical characteristics and high manufacturing yield of ferroelectric random access memory (FeRAM). The o...