Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy∗ ∗Contribution of an agency of the U.S. government; not subject to copyright

• Published in: Nanotechnology Vol. 31; no. 42
• Main Authors: Brubaker, Matt D, Roshko, Alexana, Berweger, Samuel, Blanchard, Paul T, Little, Charles A E, Harvey, Todd E, Sanford, Norman A, Bertness, Kris A
• Format: Journal Article
• Language: English
• Published: IOP Publishing 16.10.2020
• Subjects: crystallographic polarity; GaN Nanowires; piezoresponse force microscopy

Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN nanowires that were functional components in electrical test structures. In contrast to PFM measurements of vertically oriented (as-grown) na...