High-Quality Bi2Te3 Single Crystalline Films on Flexible Substrates and Bendable PhotodetectorsSupported by the National Basic Research Program of China under Grant No 2012CB619200, the National Natural Science Foundation of China under Grant Nos 61290304, 11074265 and 11174307, the Natural Science Foundation of Shanghai under Grant No 16ZR1441200, and the Frontier Science Research Project (Key Programs) of Chinese Academy of Sciences under Grant No QYZDJ-SSW-SLH018
Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to...
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Published in | Chinese physics letters Vol. 33; no. 10 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Chinese Physical Society and IOP Publishing
01.10.2016
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Abstract | Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained flexible films suitable for electronic applications. |
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AbstractList | Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained flexible films suitable for electronic applications. |
Author | Chen, Xiao-Shuang Liu, Yu-Cong Chen, Jia-Dong Hu, Gu-Jin Deng, Hui-Yong Dai, Ning |
Author_xml | – sequence: 1 givenname: Yu-Cong surname: Liu fullname: Liu, Yu-Cong organization: University of Chinese Academy of Science , Beijing 100049 – sequence: 2 givenname: Jia-Dong surname: Chen fullname: Chen, Jia-Dong organization: Changzhou Institute of Optoelectronic Technology Changzhou 213164 – sequence: 3 givenname: Hui-Yong surname: Deng fullname: Deng, Hui-Yong email: hydeng@mail.sitp.ac.cn organization: Shanghai Institute of Technical Physics, Chinese Academy of Sciences National Laboratory for Infrared Physics, Shanghai 200083 – sequence: 4 givenname: Gu-Jin surname: Hu fullname: Hu, Gu-Jin organization: Shanghai Institute of Technical Physics, Chinese Academy of Sciences National Laboratory for Infrared Physics, Shanghai 200083 – sequence: 5 givenname: Xiao-Shuang surname: Chen fullname: Chen, Xiao-Shuang organization: Shanghai Institute of Technical Physics, Chinese Academy of Sciences National Laboratory for Infrared Physics, Shanghai 200083 – sequence: 6 givenname: Ning surname: Dai fullname: Dai, Ning email: ndai@mail.sitp.ac.cn organization: Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering , Changzhou 213164 |
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Title | High-Quality Bi2Te3 Single Crystalline Films on Flexible Substrates and Bendable PhotodetectorsSupported by the National Basic Research Program of China under Grant No 2012CB619200, the National Natural Science Foundation of China under Grant Nos 61290304, 11074265 and 11174307, the Natural Science Foundation of Shanghai under Grant No 16ZR1441200, and the Frontier Science Research Project (Key Programs) of Chinese Academy of Sciences under Grant No QYZDJ-SSW-SLH018 |
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