High-power pulsed laser diodes emitting in the range

This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a re...

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Published inQuantum electronics (Woodbury, N.Y.) Vol. 43; no. 9; pp. 819 - 821
Main Authors Gorlachuk, P.V., Ryaboshtan, Yu.L., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnosov, V.D., Kurnosov, K.V., Zhuravleva, O.V., Romantsevich, V.I., Chernov, R.V., Ivanov, A.V., Simakov, V.A.
Format Journal Article
LanguageEnglish
Published Turpion Ltd and the Russian Academy of Sciences 2013
Subjects
laser diode
metal-organic vapour phase epitaxy
spectral range 1.5-1.6 μm
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Summary:This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2013v043n09ABEH015284