Study of high density plasma etch for borderless contact to solve bottom anti-reflective coating defect for beyond 0.18 /spl mu/m VLSI technology
The strip-like defect occurred for contact etch process with inorganic BARC-SiON on high density plasma etch chamber TCP9100 was studied. The interaction of SiON and photo resist on TCP9100 high density plasma was assumed and been identified in this work. A new contact scheme by inserting PEOX film...
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Published in | 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) pp. 291 - 294 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2001
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Subjects | |
Online Access | Get full text |
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