Study of high density plasma etch for borderless contact to solve bottom anti-reflective coating defect for beyond 0.18 /spl mu/m VLSI technology

• Published in: 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) pp. 291 - 294
• Main Authors: Chuan-Chieh Huang, Yi-Lang Wu, Shiou-Shiang Lin, Feng-Yueh Chang, So-Wen Kuo, Yung-How Liaw
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: Coatings; Etching; Plasma applications; Plasma density; Plasma materials processing; Plasma sources; Plasma stability; Resists; Strips; Very large scale integration

The strip-like defect occurred for contact etch process with inorganic BARC-SiON on high density plasma etch chamber TCP9100 was studied. The interaction of SiON and photo resist on TCP9100 high density plasma was assumed and been identified in this work. A new contact scheme by inserting PEOX film...