A Charge-Based Analytical Threshold Voltage Definition Applicable to Cryogenic Temperatures

A threshold voltage (V_{TH}) definition based on 2\psi_{B} band bending is widely accepted. However, it is not directly related with electrically determined V_{TH} , and is not appropriate in a near zero absolute temperature range. In this work, an alternative simple analytical definition of V_{TH}...

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Published in2021 Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors Takeuchi, Kiyoshi, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Format Conference Proceeding
LanguageEnglish
Published JSAP 13.06.2021
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Abstract A threshold voltage (V_{TH}) definition based on 2\psi_{B} band bending is widely accepted. However, it is not directly related with electrically determined V_{TH} , and is not appropriate in a near zero absolute temperature range. In this work, an alternative simple analytical definition of V_{TH} is proposed that overcomes the above mentioned shortcomings.
AbstractList A threshold voltage (V_{TH}) definition based on 2\psi_{B} band bending is widely accepted. However, it is not directly related with electrically determined V_{TH} , and is not appropriate in a near zero absolute temperature range. In this work, an alternative simple analytical definition of V_{TH} is proposed that overcomes the above mentioned shortcomings.
Author Hiramoto, Toshiro
Saraya, Takuya
Takeuchi, Kiyoshi
Mizutani, Tomoko
Kobayashi, Masaharu
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  givenname: Toshiro
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  fullname: Hiramoto, Toshiro
  organization: Institute of Industrial Science, University of Tokyo,Meguro-ku,Tokyo,Japan,153-8505
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Snippet A threshold voltage (V_{TH}) definition based on 2\psi_{B} band bending is widely accepted. However, it is not directly related with electrically determined...
SourceID ieee
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StartPage 1
SubjectTerms Bending
Conferences
Cryogenics
Nanoelectronics
Silicon
Temperature distribution
Threshold voltage
Title A Charge-Based Analytical Threshold Voltage Definition Applicable to Cryogenic Temperatures
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