A Charge-Based Analytical Threshold Voltage Definition Applicable to Cryogenic Temperatures

A threshold voltage (V_{TH}) definition based on 2\psi_{B} band bending is widely accepted. However, it is not directly related with electrically determined V_{TH} , and is not appropriate in a near zero absolute temperature range. In this work, an alternative simple analytical definition of V_{TH}...

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Bibliographic Details
Published in2021 Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors Takeuchi, Kiyoshi, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Format Conference Proceeding
LanguageEnglish
Published JSAP 13.06.2021
Subjects
Bending
Conferences
Cryogenics
Nanoelectronics
Silicon
Temperature distribution
Threshold voltage
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Summary:A threshold voltage (V_{TH}) definition based on 2\psi_{B} band bending is widely accepted. However, it is not directly related with electrically determined V_{TH} , and is not appropriate in a near zero absolute temperature range. In this work, an alternative simple analytical definition of V_{TH} is proposed that overcomes the above mentioned shortcomings.
ISSN:2161-4644