17.8 A 90.5%-Efficiency 28.7µVRMS-Noise Bipolar-Output High-Step-Up SC DC-DC Converter with Energy-Recycled Regulation and Post-Filtering for ±15V TFT-Based LAE Sensors
The applications of large-area electronics (LAEs) based on thin-film transistors (TFTs) are rapidly expanding from displays to sensors. For the TFT gate drivers, high-voltage bipolar supply rails (approximately ±15V) are required; so far, they have been typically generated from a battery (V_{BAT}) b...
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Published in | 2021 IEEE International Solid- State Circuits Conference (ISSCC) Vol. 64; pp. 270 - 272 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
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13.02.2021
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Abstract | The applications of large-area electronics (LAEs) based on thin-film transistors (TFTs) are rapidly expanding from displays to sensors. For the TFT gate drivers, high-voltage bipolar supply rails (approximately ±15V) are required; so far, they have been typically generated from a battery (V_{BAT}) by employing switched-capacitor converters (SCCs) [1]. Since a high SNR is crucial for TFT-based sensors such as an under-display fingerprint sensor [2], the noise and ripple of the SCC output, which are prone to be coupled to the readout AFE, should be minimized. As a straightforward method, an LDO can be utilized as a post-regulator in series with the SCC. However, the relatively large dropout voltage (V_{DO}) of the LDO significantly degrades the efficiency [3]. In contrast, small V DO reduces LDO loop-gain due to the pass-transistor working in the triode region, resulting in decreased supply-ripple rejection (PSR). From the perspective of SCC, owing to its fixed voltage conversion ratio (VCR), the V DO cannot be finely regulated over a wide variation of V BAT . For fine regulation, the complexity (cost) overhead or the power loss will increase in the SC circuit. In this work, an energy-recycled optimal V DO control (EROC) technique in the SC bipolar step-up stage is proposed for higher efficiency. Also, load-current-reused (LCR) post-regulator is presented to achieve high PSR while extremely minimizing the power loss at the pass-transistor. |
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AbstractList | The applications of large-area electronics (LAEs) based on thin-film transistors (TFTs) are rapidly expanding from displays to sensors. For the TFT gate drivers, high-voltage bipolar supply rails (approximately ±15V) are required; so far, they have been typically generated from a battery (V_{BAT}) by employing switched-capacitor converters (SCCs) [1]. Since a high SNR is crucial for TFT-based sensors such as an under-display fingerprint sensor [2], the noise and ripple of the SCC output, which are prone to be coupled to the readout AFE, should be minimized. As a straightforward method, an LDO can be utilized as a post-regulator in series with the SCC. However, the relatively large dropout voltage (V_{DO}) of the LDO significantly degrades the efficiency [3]. In contrast, small V DO reduces LDO loop-gain due to the pass-transistor working in the triode region, resulting in decreased supply-ripple rejection (PSR). From the perspective of SCC, owing to its fixed voltage conversion ratio (VCR), the V DO cannot be finely regulated over a wide variation of V BAT . For fine regulation, the complexity (cost) overhead or the power loss will increase in the SC circuit. In this work, an energy-recycled optimal V DO control (EROC) technique in the SC bipolar step-up stage is proposed for higher efficiency. Also, load-current-reused (LCR) post-regulator is presented to achieve high PSR while extremely minimizing the power loss at the pass-transistor. |
Author | Han, Hyunki Ko, Min-Woo Kim, Hyun-Sik |
Author_xml | – sequence: 1 givenname: Min-Woo surname: Ko fullname: Ko, Min-Woo organization: KAIST,Daejeon,Korea – sequence: 2 givenname: Hyunki surname: Han fullname: Han, Hyunki organization: KAIST,Daejeon,Korea – sequence: 3 givenname: Hyun-Sik surname: Kim fullname: Kim, Hyun-Sik organization: KAIST,Daejeon,Korea |
BookMark | eNp9j7tOwzAYRg0CiRZ4Agb-hdHBTpqLx9ZNVSRuakrXKkr_pEbBjmwXlFdiY-AF-mR06Mz0Deec4RuSM200EnLLWcA5E_cPRSHlKEx4FIQs5IGIklhE8QkZ8jTMuIhHIj0lgzBKE5olLLkgQ-feGWOxSLIB-eZpkMEYBAviO5rXtaoU6qqHMAvS_e9q8VTQZ6McwkR1pi0tfdn5budhrpotLTx29K2DQsJU0qkEafQnWo8WvpTfQq7RNj1dYNVXLW5ggc2uLb0yGkq9gVfjPJ2p9uAr3UBtLOx_eLyC5WxJJ6U7FI_jHArUzlh3Rc7rsnV4fdxLcjPLl3JOFSKuO6s-Stuvj_-j_-kf6EBfiA |
ContentType | Conference Proceeding |
DBID | 6IE 6IH CBEJK RIE RIO |
DOI | 10.1109/ISSCC42613.2021.9365935 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan (POP) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Xplore IEEE Proceedings Order Plans (POP) 1998-present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Xplore url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISBN | 1728195497 9781728195490 |
EISSN | 2376-8606 |
EndPage | 272 |
ExternalDocumentID | 9365935 |
Genre | orig-research |
GrantInformation_xml | – fundername: IC Design Education Center funderid: 10.13039/501100003836 |
GroupedDBID | 6IE 6IF 6IH 6IK 6IL 6IM 6IN AAJGR ABLEC ACGFS ADZIZ ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK CHZPO IEGSK IJVOP IPLJI JC5 M43 OCL RIE RIL RIO RNS |
ID | FETCH-ieee_primary_93659353 |
IEDL.DBID | RIE |
IngestDate | Wed Jun 26 19:27:22 EDT 2024 |
IsPeerReviewed | false |
IsScholarly | true |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-ieee_primary_93659353 |
ParticipantIDs | ieee_primary_9365935 |
PublicationCentury | 2000 |
PublicationDate | 2021-Feb.-13 |
PublicationDateYYYYMMDD | 2021-02-13 |
PublicationDate_xml | – month: 02 year: 2021 text: 2021-Feb.-13 day: 13 |
PublicationDecade | 2020 |
PublicationTitle | 2021 IEEE International Solid- State Circuits Conference (ISSCC) |
PublicationTitleAbbrev | ISSCC |
PublicationYear | 2021 |
Publisher | IEEE |
Publisher_xml | – name: IEEE |
SSID | ssj0005968 |
Score | 4.358608 |
Snippet | The applications of large-area electronics (LAEs) based on thin-film transistors (TFTs) are rapidly expanding from displays to sensors. For the TFT gate... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 270 |
SubjectTerms | Regulation Sensors Solid state circuits Switches Thin film transistors Voltage control |
Title | 17.8 A 90.5%-Efficiency 28.7µVRMS-Noise Bipolar-Output High-Step-Up SC DC-DC Converter with Energy-Recycled Regulation and Post-Filtering for ±15V TFT-Based LAE Sensors |
URI | https://ieeexplore.ieee.org/document/9365935 |
Volume | 64 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjZ3NTsJAEMc3wEkvfoBRUTMHvbmlpWw_jlDaqBE0FAg30naXhJhQAu1BH8mbB1-AJ3OnRVDDwVuzSbu7mSYzs_v7zxBybQS6CEzBqLBMnTZ4pNLA4iGqQNBfMT4JM8q3a9wNGg8jNiqQ240WRgiRwWdCwcfsLp_HUYpHZTVbN5itsyIpWmo912ptcQ7bsNb8lqbatXvfdxxMD3SZA9Y1Zf3qrx4qmQvxDkjne_KcHHlR0iRUorc_dRn_u7pDUtmK9eB544aOSEHMjsn-jzqDZfKumYoFTbBVhd1QN6sagZJLqFuKufoc9jo-7cbTpYDWdI65Ln1Kk3maAFIgFEEwOpiD70DboW0HHCTVEQUFPMUFN5MPUhmAvsp_kEMvb28vDQ7BjAO2A6beFG_l5WJABsmw-tDYEPpen7akE-Xw2HTBl_l0vFhWSNVz-84dxZ2P53ktjPF60_oJKc3imTglUOeMmxMjCgM1bGC6E5p2ZNhcDybBxNCiM1Le9YXz3cNVsof2Q05a0y9IKVmk4lKGAUl4ldn_C4kPtpg |
link.rule.ids | 310,311,786,790,795,796,802,23958,23959,25170,27958,55109 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3LTsJAFJ0gLtSNDzAqPu5Cd06hlL6WUCCggIYWwo60nWlCTGgD7UI_yZ0Lf4Avc25BUMPCXTNNOzOZSc49M-fcS8it5irc1blKuaErtML8EnUN5qELBPFKZYGXqnx7WmtQeRipowy5X3thOOep-IxL-Jje5bPQT_CorGgqmmoq6g7ZFThfMpdurY2gw9SMlYJLvCy2bduykCAoggWWZWn18a8qKimINA9J97v7pXbkRUpiT_Lf_mRm_O_4jkh-Y9eD5zUQHZMMn56Qgx-ZBnPkXdYlA6pgliT1jjbSvBFouoSyIemLz2G_a9NeOJlzqE0iZLv0KYmjJAbUgVCUgtFBBLYFdYvWLbBQq45iUMBzXGikBkIqQtBXsQsZ9JcF7sWSgztlgAWBaXOC9_JiMCDCZFh8yOoQnKZDawJGGXSqDbAFow5n8zwpNBuO1aI483G0zIYxXk1aOSXZaTjlZwTKTGV6oPmeW_IqSHg83fQ1kylu4Aaa7J-T3LY_XGxvviF7LafbGXfavccC2ce1RNW0rFySbDxL-JUICmLvOt0LX1Oque4 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=2021+IEEE+International+Solid-+State+Circuits+Conference+%28ISSCC%29&rft.atitle=17.8+A+90.5%25-Efficiency+28.7%C2%B5VRMS-Noise+Bipolar-Output+High-Step-Up+SC+DC-DC+Converter+with+Energy-Recycled+Regulation+and+Post-Filtering+for+%C2%B115V+TFT-Based+LAE+Sensors&rft.au=Ko%2C+Min-Woo&rft.au=Han%2C+Hyunki&rft.au=Kim%2C+Hyun-Sik&rft.date=2021-02-13&rft.pub=IEEE&rft.eissn=2376-8606&rft.volume=64&rft.spage=270&rft.epage=272&rft_id=info:doi/10.1109%2FISSCC42613.2021.9365935&rft.externalDocID=9365935 |