First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor
InGaAsN has received a lot of attention lately. Incorporating a small amount of nitrogen (N) into InGaAs reduces the strain of InGaAs layer grown on GaAs (Sakai et al, 1993; Van Vechten, 1969). In addition, the E/sub G/ decreases as N is added, which is a desirable characteristic for GaAs-based devi...
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Published in | 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) pp. 147 - 148 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2000
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Subjects | |
Online Access | Get full text |
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