First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor

InGaAsN has received a lot of attention lately. Incorporating a small amount of nitrogen (N) into InGaAs reduces the strain of InGaAs layer grown on GaAs (Sakai et al, 1993; Van Vechten, 1969). In addition, the E/sub G/ decreases as N is added, which is a desirable characteristic for GaAs-based devi...

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Bibliographic Details
Published in58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) pp. 147 - 148
Main Authors Chang, P.C., Li, N.Y., Laroche, J.R., Monier, C., Baca, A.G., Hou, H.Q., Ren, F., Pearton, S.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
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