25.2 A 10MHz 3-to-40V VIN tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applications

• Published in: 2017 IEEE International Solid-State Circuits Conference (ISSCC) pp. 430 - 431
• Main Authors: Xugang Ke, Sankman, Joseph, Yingping Chen, Lenian He, Ma, D. Brian
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.02.2017
• Subjects: Electromagnetic interference; Field effect transistors; Frequency modulation; Gallium nitride; Logic gates; Switches

As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with...