High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications

• Published in: 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) Vol. 3; pp. 1187 - 1190 vol.3
• Main Authors: Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Leoni, R.E., Lichwala, S.J., Kazior, T.E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1999
• Subjects: Density measurement; Frequency estimation; Gallium arsenide; HEMTs; mHEMTs; Microelectronics; Microwave devices; MODFETs; Voltage; Wet etching

Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs...