High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications
Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs...
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Published in | 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) Vol. 3; pp. 1187 - 1190 vol.3 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1999
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Subjects | |
Online Access | Get full text |
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