High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications
Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs...
Saved in:
Published in | 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) Vol. 3; pp. 1187 - 1190 vol.3 |
---|---|
Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1999
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs which allow operation at V/sub ds/=6 V, resulting in high power and gain at 10 GHz. |
---|---|
AbstractList | Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs which allow operation at V/sub ds/=6 V, resulting in high power and gain at 10 GHz. |
Author | Lyman, P.S. Hoke, W.E. Leoni, R.E. Kazior, T.E. Whelan, C.S. Lichwala, S.J. McTaggart, R.A. Marsh, P.F. |
Author_xml | – sequence: 1 givenname: C.S. surname: Whelan fullname: Whelan, C.S. organization: Adv. Device Center, Raytheon Microelectron., Andover, MA, USA – sequence: 2 givenname: W.E. surname: Hoke fullname: Hoke, W.E. – sequence: 3 givenname: R.A. surname: McTaggart fullname: McTaggart, R.A. – sequence: 4 givenname: P.S. surname: Lyman fullname: Lyman, P.S. – sequence: 5 givenname: P.F. surname: Marsh fullname: Marsh, P.F. – sequence: 6 givenname: R.E. surname: Leoni fullname: Leoni, R.E. – sequence: 7 givenname: S.J. surname: Lichwala fullname: Lichwala, S.J. – sequence: 8 givenname: T.E. surname: Kazior fullname: Kazior, T.E. |
BookMark | eNp9j8tOwzAURC0BEq98AKzuDzS2cdPUywiVpguvqIRYVbfpbWtIbMsODfx9K-ia0ZHmSLOaW3bpvCPGHqTIpRSam7fXd5NLrXVelrrQ-oJlupyKE6qQqphcsyylD3HKuBiXSt2w79ru9rCOhJ8bPzg4-LbHHcHCVe0cq8QXjqevNYhcPfE5nn0y5VWCjnrsfAx720A9M0vY-gidbaIf8ECAbgPGjH49-IEiYAitbbC33qV7drXFNlF27jv2-DJbPtcjS0SrEG2H8Wf1d0P9Ox4BPBpM9Q |
ContentType | Conference Proceeding |
DBID | 6IE 6IH CBEJK RIE RIO |
DOI | 10.1109/MWSYM.1999.779599 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan (POP) 1998-present by volume IEEE Xplore All Conference Proceedings IEL IEEE Proceedings Order Plans (POP) 1998-present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Xplore / Electronic Library Online (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
EndPage | 1190 vol.3 |
ExternalDocumentID | 779599 |
Genre | orig-research |
GroupedDBID | 6IE 6IH 6IK 6IL AAJGR ACGHX ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK OCL RIE RIL RIO |
ID | FETCH-ieee_primary_7795993 |
IEDL.DBID | RIE |
ISBN | 9780780351356 0780351355 |
IngestDate | Wed Jun 26 19:27:05 EDT 2024 |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-ieee_primary_7795993 |
ParticipantIDs | ieee_primary_779599 |
PublicationCentury | 1900 |
PublicationDate | 19990000 |
PublicationDateYYYYMMDD | 1999-01-01 |
PublicationDate_xml | – year: 1999 text: 19990000 |
PublicationDecade | 1990 |
PublicationTitle | 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) |
PublicationTitleAbbrev | MWSYM |
PublicationYear | 1999 |
Publisher | IEEE |
Publisher_xml | – name: IEEE |
SSID | ssj0000454733 |
Score | 2.5741453 |
Snippet | Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 1187 |
SubjectTerms | Density measurement Frequency estimation Gallium arsenide HEMTs mHEMTs Microelectronics Microwave devices MODFETs Voltage Wet etching |
Title | High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications |
URI | https://ieeexplore.ieee.org/document/779599 |
Volume | 3 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8MwDI5gJ068hmA85APXvtauSY8T2gupCIkhxmlKmkxCY93EOkD8euy0jId24Jb0EFlKFfuz_X1m7FILLqVRwiGijBMFSjvJJEGw0pSaCy1avh33lt7E_fvoetQaVTrblgtjjLHNZ8alpa3l63m2olSZx2kwdrLNtoXfLKla63QKKcnxMLTAXFB1DP1opa_ztY-rombgJ176cPeYElMvcctDfw1Xsb6lu1uStpdWkpBaSqbuqlBu9vFHsPGfZu-x-jeJD27X7mmfbZn8kL1TXwcgDJZTjfgb8HEq8EWBQd5-7sn20hvk-G8qQJTd9HqyWsfCay9hZgo5m-O9PGXQ76RDwHgXZtTQ9yZfDchcQ5o6dr2g2WvwszheZ41uZ3jVd8jw8aLUuBiXNodHrJbPc3PMIAsirUIMFhEARcJoFfuStwIeTnyMYTJ-wg42HNDY-PWU7ZTqB5TJOGO14mVlztG3F-rC3uonHaWjrQ |
link.rule.ids | 310,311,786,790,795,796,802,4069,4070,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LTwIxEG4UD3ryhVF89eB1X-yy7R6JARalxESMeCLttiQEWYjsqvHXO-2u-AgHb-0emkm66cw3M983CF1JSjhXglqaKGMFnpBWNI4ArNS5JFTShmvGvbF-GD8EN8PGsNTZNlwYpZRpPlO2XppavpwnuU6VOUQPxo420Ra4eZcUZK1VQkVryRHfN9Cc6voYeNJSYedrH5ZlTc-NHPZ4_8Q0Vy-yi2N_jVcx3qW9W9C2l0aUUDeVTO08E3by8Uey8Z-G76HqN40P360c1D7aUOkhetedHRiAMJ9KQOAYnqcM3hTcTZvPHd5cOt0U_k6BAWfXnQ4v1yF1mks8UxmfzeFmJgmOW2yAIeLFM93S98ZfFeapxIxZZr3Q09fwz_J4FdXarcF1bGnDR4tC5WJU2OwfoUo6T9UxwokXSOFDuAgQKKBKitDlpOERf-xCFJOQE3Sw5oDa2q-XaDsesN6o1-3fnqKdQgtB5zXOUCV7ydU5ePpMXJgb_gTttqcB |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=1999+IEEE+MTT-S+International+Microwave+Symposium+Digest+%28Cat.+No.99CH36282%29&rft.atitle=High+breakdown+voltage+InAlGaAs%2FIn%2Fsub+0.32%2FGa%2Fsub+0.68%2FAs+metamorphic+HEMT+for+microwave+and+MM-wave+power+applications&rft.au=Whelan%2C+C.S.&rft.au=Hoke%2C+W.E.&rft.au=McTaggart%2C+R.A.&rft.au=Lyman%2C+P.S.&rft.date=1999-01-01&rft.pub=IEEE&rft.isbn=9780780351356&rft.volume=3&rft.spage=1187&rft.epage=1190+vol.3&rft_id=info:doi/10.1109%2FMWSYM.1999.779599&rft.externalDocID=779599 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780351356/lc.gif&client=summon&freeimage=true |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780351356/mc.gif&client=summon&freeimage=true |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780351356/sc.gif&client=summon&freeimage=true |