High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications

Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs...

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Published in1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) Vol. 3; pp. 1187 - 1190 vol.3
Main Authors Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Leoni, R.E., Lichwala, S.J., Kazior, T.E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Density measurement
Frequency estimation
Gallium arsenide
HEMTs
mHEMTs
Microelectronics
Microwave devices
MODFETs
Voltage
Wet etching
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Abstract Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs which allow operation at V/sub ds/=6 V, resulting in high power and gain at 10 GHz.
AbstractList Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs which allow operation at V/sub ds/=6 V, resulting in high power and gain at 10 GHz.
Author Lyman, P.S.
Hoke, W.E.
Leoni, R.E.
Kazior, T.E.
Whelan, C.S.
Lichwala, S.J.
McTaggart, R.A.
Marsh, P.F.
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Snippet Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by...
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StartPage 1187
SubjectTerms Density measurement
Frequency estimation
Gallium arsenide
HEMTs
mHEMTs
Microelectronics
Microwave devices
MODFETs
Voltage
Wet etching
Title High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications
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