Study of breakdown effects in silicon multi-guard structures

• Published in: 1997 IEEE Nuclear Science Symposium Conference Record Vol. 1; pp. 498 - 502 vol.1
• Main Authors: Bacchetta, N., Della Betta, G.-F., Da Rold, M., Dell'Orso, R., Fuochi, P.G., Lanza, A., Messineo, A., Militaru, O., Paccagnella, A., Verzellesi, G., Wheadon, R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1997
• Subjects: Breakdown voltage; Electric breakdown; Ionizing radiation; Large Hadron Collider; Microscopy; Microstrip; Pediatrics; Radiation detectors; Silicon; Testing

Many applications of silicon p/sup +/-n junctions as detectors require high voltage operation. In particular the LHC experiments, because of the radiation damage level, need very high bias working voltage to fully collect the ionising generated charge multi-guard structures can be used in order to i...