Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets

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Bibliographic Details
Published in[1991] 49th Annual Device Research Conference Digest pp. IIB_4 - 0_26
Main Authors Ransom, C.M., Jackson, T.N., DeGelormo, J.F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1991
Subjects
Aluminum
Annealing
Charge carrier processes
Dielectric substrates
Germanium
Ion implantation
Lithography
MOSFETs
Temperature
Transconductance
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ISBN:9780879426477
0879426470
DOI:10.1109/DRC.1991.664677