Electro thermal transient simulation of silicon carbide power MOSFET

• Published in: 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS) p. 1
• Main Authors: Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2013
• Subjects: Computational modeling; Current density; MOSFET; Photonic band gap; Semiconductor device modeling; Silicon carbide; Transient analysis

This research focuses on the transient performance of N-Channel Silicon Carbide (4H-SiC) vertical D-MOSFET structure at 300K and elevated temperature conditions. Transient analysis enables the designer to understand the thermal stress the semiconductor device undergoes while dissipating high power f...