Application and operation of a superconducting sampler based instrumentation system

• Published in: 7th IEEE Conference on Instrumentation and Measurement Technology pp. 255 - 258
• Main Authors: Hanson, E., Shen, Z.-Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1990
• Subjects: Bandwidth; Diodes; Gallium arsenide; Jitter; MESFETs; Root mean square; Sampling methods; Silicon; Superconducting device noise; Superconducting microwave devices
• DOI: 10.1109/IMTC.1990.66012

A superconducting sampler system with a self-triggering mechanism achieved a 70-GHz bandwidth, 5-ps rise time resolution, 20- mu V r.m.s. (root mean square) noise floor, less than 1-ps jitter, and an 8-mV, 70-GHz triggering capability. The sampler was used for studying ion-induced SEU (single-event-upset) transient phenomena in silicon diodes and GaAs MESFETs. Compared with conventional methods, the superconducting sampling system is easy to use and provides superior capabilities. An SEU transient has been measured with a record 25-ps rise time. The superconducting sampler configured as a TDR (time-domain reflectometer) has achieved a 2.5-ps rise time at the I/O interface after deconvolution. This corresponds to a 0.375-mm spatial resolution. It is concluded that the TDR can provide useful information for improving the performance of microwave and millimeter-wave devices.< >