Non-thermionic cathodes-solid state electron emitters based on GaN and LaB/sub 6

We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB/sub 6/. The device achieves effective negativ...

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Bibliographic Details
Published inInternational Electron Devices Meeting. IEDM Technical Digest pp. 729 - 732
Main Authors Akinwande, A.I., Horning, R.D., Ruden, P.P., Arch, D.K., Johnson, B.R., Heil, B.G., King, J.M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Aluminum gallium nitride
Cathodes
Electron emission
Electron guns
Gallium nitride
Microelectronics
Optical materials
P-n junctions
Solid state circuits
Spontaneous emission
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Summary:We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB/sub 6/. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide bandgap semiconductor into vacuum through an intermediary low workfunction material.
ISBN:9780780341005
0780341007
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1997.650486