Thermal annealing action on the capacity-voltage and siemens-voltage characteristic Ga2O3-GaAs structures

Thin films of gallium oxide have been deposited in vacuum on the GaAs substrates by thermal evaporation of powder Ga 2 O 3 . The capacity-voltage and siemens-voltage characteristic of Ga 2 O 3 -GaAs structures were investigated. It was shown that the greater the action time of high-temperature treat...

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Published in2011 International Siberian Conference on Control and Communications (SIBCON) pp. 252 - 254
Main Authors Yaskevich, T. M., Zarubin, A. N., Kalygina, V. M., Petrova, Y. S., Tyazhev, A. V., Tsupiy, S. Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2011
Subjects
Annealing
Educational institutions
Gallium
Gallium arsenide
gallium oxide
MIS structures
Permittivity
Surface treatment
surface-states
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Summary:Thin films of gallium oxide have been deposited in vacuum on the GaAs substrates by thermal evaporation of powder Ga 2 O 3 . The capacity-voltage and siemens-voltage characteristic of Ga 2 O 3 -GaAs structures were investigated. It was shown that the greater the action time of high-temperature treatment in the flow of inactive gas (Ar), the lower the capacitance of the dielectric and thus lower permittivity (ε) of Ga 2 O 3 . This phenomenon can be explained by the change structure of Ga 2 O 3 and its reconfiguration in the more conductive phase with a small quantity of the dielectric constant. The amount of surface-states density at the interface of annealed MOS structures decreases to 1·10 12 cm -2 eV -1 .
ISBN:1457710692
9781457710698
DOI:10.1109/SIBCON.2011.6072647