High power nitrogen-incorporating remote plasma oxidation process for MOS applications

• Published in: IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science p. 150
• Main Authors: Parker, C.G., Lucovsky, G., Hauser, J.R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1997
• Subjects: Electrons; Helium; Life testing; Nitrogen; Oxidation; Plasma applications; Plasma devices; Rapid thermal processing; Thermal degradation; Thermal stresses

Summary form only given. A 400 W remote plasma oxidation process has been developed in a cluster tool which uses N/sub 2/O and O/sub 2/ for controlling incorporated amounts of nitrogen within the grown oxide. This technique has been developed for Si/SiO/sub 2/ interface formation for addition of nit...