Analysis of a source hetrojunction LDMOS device with strained silicon channel

In this paper we propose a novel power MOSFET employing a source and drain hetrojunction as well as a thin strained silicon layer at the top of the channel and N-Drift regions. We discuss the physics involved in the operation of this device. Analysis using a 2D device simulator indicates improvement...

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Bibliographic Details
Published in2011 19th Iranian Conference on Electrical Engineering p. 1
Main Authors Fathipour, V., Malakoutian, M. A., Fathipour, S., Fathipour, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
(RADIO) HIGH FREQUENCY
POWER MOSFET
SHOT LDMOS
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Summary:In this paper we propose a novel power MOSFET employing a source and drain hetrojunction as well as a thin strained silicon layer at the top of the channel and N-Drift regions. We discuss the physics involved in the operation of this device. Analysis using a 2D device simulator indicates improvements of 36.6%, 22.6% and 10% in current drivability, transconductance and cut off frequency respectively as compared with the traditional LDMOS structure. However, these improvements are accompanied by a suppression of 10% in the break down voltage.
ISBN:1457707306
9781457707308
ISSN:2164-7054