Detailed analysis and computationally efficient modeling of ultra-shallow as-implanted profiles obtained by low energy B, BF/sub 2/, and As ion implantation

• Published in: Proceedings of 11th International Conference on Ion Implantation Technology pp. 559 - 562
• Main Authors: Parab, K.B., Morris, M.F., Yang, S.-H., Morris, S.J., Tian, S., Obradovic, B., Tasch, A.F., Kamenitsa, D., Simonton, R., Magee, C.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1996
• Subjects: Boron; Computational modeling; Implants; Integrated circuit technology; Ion implantation; Mass spectroscopy; Microelectronics; Predictive models; Semiconductor process modeling; Silicon

With increasing levels of integration, future generations of integrated circuit technology will require extremely shallow dopant profiles. Ion implantation has long been used in semiconductor material processing and will be a vitally important technique for obtaining ultra-shallow dopant profiles. H...