2.4-GHz 0.18-µm CMOS highly linear Power Amplifier

• Published in: The 2010 International Conference on Advanced Technologies for Communications pp. 210 - 212
• Main Authors: Yongbing Qian, Wenyuan Li, Zhigong Wang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2010
• Subjects: 1dB compression point; CMOS integrated circuits; CMOS PA; CMOS process; Layout; PAE; power amplifier; Power amplifiers; Power generation; Radio frequency; Simulation

A Class-AB Power Amplifier (PA) integrated circuit for 2.4 GHz is presented. It is designed in SMIC 0.18 μm RF CMOS process. The PA adopts two-stage differential structure. The driver-stage uses cascode structure. In the output-stage common-source structure is employed. The proposed PA provides 24.8...