X- and gamma ray imaging systems based on CdTe-CMOS detector technology

Both charge integrating and single photon identifying X- and gamma ray imaging devices constructed of CdTe pixel detectors bump bonded to CMOS ASICs have been developed, tested and utilized in a variety of applications. The charge integrating devices apply either frame mode or time delayed integrati...

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Published in2008 IEEE Nuclear Science Symposium Conference Record pp. 518 - 522
Main Authors Spartiotis, Konstantinos, Durrant, Ray, Leppanen, Anssi, Lohman, Henrik, Mannisto, Olli, Pantsar, Tuomas, Pyyhtia, Jouni, Schulman, Tom
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
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Abstract Both charge integrating and single photon identifying X- and gamma ray imaging devices constructed of CdTe pixel detectors bump bonded to CMOS ASICs have been developed, tested and utilized in a variety of applications. The charge integrating devices apply either frame mode or time delayed integration (TDI) signal readout schemes on the CMOS pixels depending on the requirements of the application. Frame mode readout is applied in real time and tomographic imaging as well as in low speed scanning, and TDI readout in high speed (up to 50 cm/s) industrial on-line scan imaging. The small pixel size of 100 μm of the charge integrating sensors combined with the high absorption efficiency of CdTe, optimized CMOS readout circuitry and real time calibration result in exquisite performance (high DQE) throughout a wide X-ray energy window (10 - 300 keV) and superb image quality very close to the theoretical ideal. Additionally, these sensor systems exhibit good stability over time and negligible afterglow. System level descriptions of various customized X-ray imagers are presented including up to 30 cm long scanning multiple line TDI cameras and small field of view real time area cameras which can be custom made to desired shapes of active area. Example images acquired in several different applications are shown. The unique photon identifying device (PID) comprises eight CdTe-CMOS hybrids each having 2048 pixels with a pitch of 350 μm. Every pixel accommodates a charge sensitive preamp followed by peak/hold, comparator and user selectable ADC/counter circuitry. The PID hybrids can be operated in several functional modes providing photon counting and energy dispersive imaging and timing measurements. 8 bit pixel amplifier offset and gain tuning yields a full field energy resolution close to the single pixel resolution which is measured to be 7 keV FWHM for the Am-241 main peak (60 keV). The PID system description is presented together with energy selective X- and gamma ray images and energy spectra of Am-241 and Co-57 sources. The PID is to be utilized in gamma imaging, X-ray back scatter imaging, energy selective photon counting X-ray imaging, X-ray diffraction experiments etc.
AbstractList Both charge integrating and single photon identifying X- and gamma ray imaging devices constructed of CdTe pixel detectors bump bonded to CMOS ASICs have been developed, tested and utilized in a variety of applications. The charge integrating devices apply either frame mode or time delayed integration (TDI) signal readout schemes on the CMOS pixels depending on the requirements of the application. Frame mode readout is applied in real time and tomographic imaging as well as in low speed scanning, and TDI readout in high speed (up to 50 cm/s) industrial on-line scan imaging. The small pixel size of 100 μm of the charge integrating sensors combined with the high absorption efficiency of CdTe, optimized CMOS readout circuitry and real time calibration result in exquisite performance (high DQE) throughout a wide X-ray energy window (10 - 300 keV) and superb image quality very close to the theoretical ideal. Additionally, these sensor systems exhibit good stability over time and negligible afterglow. System level descriptions of various customized X-ray imagers are presented including up to 30 cm long scanning multiple line TDI cameras and small field of view real time area cameras which can be custom made to desired shapes of active area. Example images acquired in several different applications are shown. The unique photon identifying device (PID) comprises eight CdTe-CMOS hybrids each having 2048 pixels with a pitch of 350 μm. Every pixel accommodates a charge sensitive preamp followed by peak/hold, comparator and user selectable ADC/counter circuitry. The PID hybrids can be operated in several functional modes providing photon counting and energy dispersive imaging and timing measurements. 8 bit pixel amplifier offset and gain tuning yields a full field energy resolution close to the single pixel resolution which is measured to be 7 keV FWHM for the Am-241 main peak (60 keV). The PID system description is presented together with energy selective X- and gamma ray images and energy spectra of Am-241 and Co-57 sources. The PID is to be utilized in gamma imaging, X-ray back scatter imaging, energy selective photon counting X-ray imaging, X-ray diffraction experiments etc.
Author Durrant, Ray
Schulman, Tom
Leppanen, Anssi
Pantsar, Tuomas
Lohman, Henrik
Pyyhtia, Jouni
Spartiotis, Konstantinos
Mannisto, Olli
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Snippet Both charge integrating and single photon identifying X- and gamma ray imaging devices constructed of CdTe pixel detectors bump bonded to CMOS ASICs have been...
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StartPage 518
SubjectTerms Cameras
Circuits
CMOS image sensors
Energy measurement
Gamma ray detection
Gamma ray detectors
Nuclear imaging
Optical imaging
Pixel
X-ray imaging
Title X- and gamma ray imaging systems based on CdTe-CMOS detector technology
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