10, 5, 3, 2 Centimeter Wave Length Band High Power Transistors of R&PC «Istok

A series of high output power hermetically sealed, internally matched FETs for 10, 5, 3, 2 cm wave length band with output power higher than 10, 10, 5, 5 W, associated gain higher than 8, 7, 6 and 5 dB correspondently has been developed. FETs are designed for both continuous and pulse operation

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Bibliographic Details
Published in2006 16th International Crimean Microwave and Telecommunication Technology Vol. 1; pp. 167 - 168
Main Authors Korolev, A.N., Klimova, A.V., Krasnik, V.A., Liapin, L.V., Malyshchik, V.M., Manchenko, L.V., Pchelin, V.A., Tregubov, V.B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2006
Subjects
Gallium arsenide
Helium
IEEE catalog
Microwave FETs
Microwave technology
Organizing
Power transistors
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Summary:A series of high output power hermetically sealed, internally matched FETs for 10, 5, 3, 2 cm wave length band with output power higher than 10, 10, 5, 5 W, associated gain higher than 8, 7, 6 and 5 dB correspondently has been developed. FETs are designed for both continuous and pulse operation
ISBN:9663220066
9789663220062
DOI:10.1109/CRMICO.2006.256344