A comprehensive study of lateral and vertical current transport in Si/Si/sub 1-x/Ge/sub xSi HBT's

• Published in: Proceedings of IEEE International Electron Devices Meeting pp. 87 - 90
• Main Authors: Matutinovic-Krstelj, Z., Venkataraman, V., Prinz, E.J., Sturm, J.C., Magee, C.W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1993
• Subjects: Charge carrier processes; Doping profiles; Electrons; Germanium silicon alloys; Hall effect; Heterojunction bipolar transistors; Photonic band gap; Scattering; Semiconductor process modeling; Silicon germanium

We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si/sub 1-x/Ge/sub xSi npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall sca...