High performance Si and SiGe-base p-n-p transistors

Heterojunction p-n-p transistors with SiGe bases have been fabricated. Molecular beam epitaxy (MBE) was used to deposit both Si and SiGe bases, and the emitter was formed by low-temperature epitaxy. The base thickness of the SiGe-base transistor, as measured by secondary ion mass spectrometry, is le...

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Bibliographic Details
Published inTechnical Digest., International Electron Devices Meeting pp. 889 - 891
Main Authors Harame, D.L., Stork, J.M.C., Patton, G.L., Iyer, S.S., Meyerson, B.S., Scilla, G.J., Crabbe, E.F., Ganin, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1988
Subjects
Cutoff frequency
Epitaxial growth
Frequency measurement
Germanium silicon alloys
Heterojunctions
Mass spectroscopy
Molecular beam epitaxial growth
Silicon germanium
Temperature measurement
Thickness measurement
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Summary:Heterojunction p-n-p transistors with SiGe bases have been fabricated. Molecular beam epitaxy (MBE) was used to deposit both Si and SiGe bases, and the emitter was formed by low-temperature epitaxy. The base thickness of the SiGe-base transistor, as measured by secondary ion mass spectrometry, is less than 70 nm. The current gain of the SiGe-base device is 20 at room temperature and increases with decreasing temperature. Preliminary high-frequency measurements of small-geometry transistors have established a cutoff frequency of 10 GHz for the Si-base and above 12 GHz for the SiGe-base transistors. These are believed to be the fastest bipolar p-n-p transistors fabricated in silicon technology.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1988.32954