In/sub 0.53/Ga/sub 0.47/As/InP type-I DHBTs having 450 GHz f/sub T/ and GHz f/sub max/ w/C/sub cb/I/sub c/ = 0.38 ps/V

The paper reports on InP/In 0.53 Ga 0.47 As /InP DHBTs fabricated using a conventional mesa structure, exhibiting a 450 GHz f tau and 490 GHz f max , which is to our knowledge the highest simultaneous f tau and f max for a mesa HBT. The collector has been scaled vertically to 120 nm for reduced elec...

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Bibliographic Details
Published in63rd Device Research Conference Digest, 2005. DRC '05 Vol. 1; pp. 265 - 266
Main Authors Liu, Amy W.K., Fastenau, Joel M., Wu, Ying, Loubychev, Dmitri, Fang, Xiao-Ming, Rodwell, Mark J.W., Griffith, Zach
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Circuit synthesis
Coupling circuits
Doping
Double heterojunction bipolar transistors
Frequency
Indium gallium arsenide
Indium phosphide
Logic circuits
Logic design
Logic devices
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Summary:The paper reports on InP/In 0.53 Ga 0.47 As /InP DHBTs fabricated using a conventional mesa structure, exhibiting a 450 GHz f tau and 490 GHz f max , which is to our knowledge the highest simultaneous f tau and f max for a mesa HBT. The collector has been scaled vertically to 120 nm for reduced electron collector transit time, aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors, and the base and emitter contact resistances rho c have been reduced. The device reported here employs a 30 nm highly doped InGaAs base and an InGaAs/InAlAs superlattice base-collector grade
ISBN:0780390407
9780780390409
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2005.1553150