Pumped channel MOS photodetector

• Published in: 1968 International Electron Devices Meeting p. 124
• Main Authors: Nicollian, E.H., Goetzberger, A.
• Format: Conference Proceeding
• Language: English
• Published: IRE 1968
• Subjects: Capacitance measurement; Coatings; Laboratories; Nanoscale devices; Photodetectors; PIN photodiodes; Silicon; Telephony; Temperature; Testing

A new type of photodetector, based on an MOS capacitor structure, is described. It is based on the fact that surface-states under the gate-electrode can act as very efficient recombination centers when the device is operated with a large ac signal. Thus a surface inversion-layer can be depleted of c...