Response of SOI bipolar transistors exposed to /spl gamma/-rays under different dose rate and bias conditions
This work is devoted to the analysis of /spl gamma/-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology. Such a process is currently being investigated in order to assess its suitability for use in radiation-resistant applications, namely in the...
Saved in:
Published in | IEEE Symposium Conference Record Nuclear Science 2004 Vol. 2; pp. 756 - 760 Vol. 2 |
---|---|
Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2004
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | This work is devoted to the analysis of /spl gamma/-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology. Such a process is currently being investigated in order to assess its suitability for use in radiation-resistant applications, namely in the design of readout electronics for radiation detectors in high energy physics experiments and for operation in the space environment. Possible sensitivity to low dose-rate was tested by exposing the devices to /spl gamma/-ray sources with different activities. High dose rate irradiations were performed with the devices biased in different operating regions in order to evaluate the effects of bias conditions on the device sensitivity to radiation. |
---|---|
AbstractList | This work is devoted to the analysis of /spl gamma/-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology. Such a process is currently being investigated in order to assess its suitability for use in radiation-resistant applications, namely in the design of readout electronics for radiation detectors in high energy physics experiments and for operation in the space environment. Possible sensitivity to low dose-rate was tested by exposing the devices to /spl gamma/-ray sources with different activities. High dose rate irradiations were performed with the devices biased in different operating regions in order to evaluate the effects of bias conditions on the device sensitivity to radiation. |
Author | Fallica, G. Oberti, E. Traversi, G. Modica, R. Manghisoni, M. Ratti, L. Re, V. Speziali, V. |
Author_xml | – sequence: 1 givenname: L. surname: Ratti fullname: Ratti, L. organization: Dipt. di Elettronica, Pavia Univ., Italy – sequence: 2 givenname: M. surname: Manghisoni fullname: Manghisoni, M. – sequence: 3 givenname: E. surname: Oberti fullname: Oberti, E. – sequence: 4 givenname: V. surname: Re fullname: Re, V. – sequence: 5 givenname: V. surname: Speziali fullname: Speziali, V. – sequence: 6 givenname: G. surname: Traversi fullname: Traversi, G. – sequence: 7 givenname: G. surname: Fallica fullname: Fallica, G. – sequence: 8 givenname: R. surname: Modica fullname: Modica, R. |
BookMark | eNp9T0FOwzAQNFAkAuQFvewHkqwTp0nPFYgeAIlwrwzeIKPEjrxGor_Hh164dDTSSjOjWc2tWDnvSIi1xFJK3FYvw_C835U1oiql2tRNjRci33Y9JjZ9hxIvRVa3XVdgX2-v_nnYrEQmk140m1bdiJz5GxNUq6RUmZjfiBfvmMCPMLzu4cMuftIBYtCOLUcfGOh38UwGooeKlwm-9Dzrqgj6yPDjDAUwdhwpkItgUhKCjgTamdSmGT69Mzba9OVeXI96YspP906sHx_ed0-FJaLDEuysw_FwGtmcd_8AUtRSkQ |
ContentType | Conference Proceeding |
DBID | 6IE 6IH CBEJK RIE RIO |
DOI | 10.1109/NSSMIC.2004.1462320 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan (POP) 1998-present by volume IEEE Xplore All Conference Proceedings IEL IEEE Proceedings Order Plans (POP) 1998-present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEL url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Physics |
EISBN | 9780780387010 0780387015 |
EISSN | 2577-0829 |
EndPage | 760 Vol. 2 |
ExternalDocumentID | 1462320 |
Genre | orig-research |
GroupedDBID | 29I 6IE 6IF 6IH 6IK 6IL AAJGR ADZIZ ALMA_UNASSIGNED_HOLDINGS CBEJK CHZPO JC5 OCL RIE RIO |
ID | FETCH-ieee_primary_14623203 |
IEDL.DBID | RIE |
ISBN | 9780780387003 0780387007 |
ISSN | 1082-3654 |
IngestDate | Wed Jun 26 19:26:56 EDT 2024 |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-ieee_primary_14623203 |
ParticipantIDs | ieee_primary_1462320 |
PublicationCentury | 2000 |
PublicationDate | 20040000 |
PublicationDateYYYYMMDD | 2004-01-01 |
PublicationDate_xml | – year: 2004 text: 20040000 |
PublicationDecade | 2000 |
PublicationTitle | IEEE Symposium Conference Record Nuclear Science 2004 |
PublicationTitleAbbrev | NSSMIC |
PublicationYear | 2004 |
Publisher | IEEE |
Publisher_xml | – name: IEEE |
SSID | ssj0000454114 ssj0020344 |
Score | 2.7012 |
Snippet | This work is devoted to the analysis of /spl gamma/-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology.... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 756 |
SubjectTerms | BiCMOS integrated circuits Bipolar transistors Insulation Ionization Performance evaluation Radiation detectors Readout electronics Silicon on insulator technology Space technology Testing |
Title | Response of SOI bipolar transistors exposed to /spl gamma/-rays under different dose rate and bias conditions |
URI | https://ieeexplore.ieee.org/document/1462320 |
Volume | 2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS8NAEB5qQfDkoxW1KnPwaJJuXiZnsVTBKlaht7KviGiT0qQH_fXObtKK0oO3vNidJSzffrPffAtwwUScJkESOcrProig6NQRUSBoxtObRDCfa-v2OYqHL-HdJJq04HJdC6O1tuIz7ZpLu5evCrk0qTKPZjUtAIigbyV9v67VWudTjJUcM1DTkC1jZVeL630niKPQUvbEbNYSKjbOO6v7oLEjYv3UG43HNH5LHN2mv18Hr1jcGezC_SriWm7y7i4r4cqvP2aO_x3SHnR_KvzwcY1d-9DS-QFsWzmoLDswe6qlsxqLDMcPtyje5oYDY2WgzTqLlEjdFaVWWBXolfMPfOWzGfecBf8s0ZSmLXB1-kqFir5E40qBPFfUGi-RiLiq9WJd6A1unq-Hjgl8Oq_9L6ZNzMEhtPMi10eAkciYZlmoEi5CWvAIGTMpRV9mSqYhD4-hs6mFk82Pe7BT62NMouMU2tViqc8I-itxbv_5N8dwq84 |
link.rule.ids | 310,311,786,790,795,796,802,4069,4070,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8JAEJ4QjNGTDzAqPubg0baUttCejQQU0Agm3Mi-aozSEloO-uud3RaMxoO3vrI7bbP55tv95luAK5e3o9ALA0u24g4RFBVZPPA4jXi6E3K3xZRx-xy1e8_-3TSYVuB6UwujlDLiM2XrQ7OWL1Ox0lNlDo1qSgCIoG8Rzjc7RbXWZkZFm8m5GmxKuqXN7Ap5fcvy2oFvSHuol2sJF0vvnfW5VxoSuc3IGY3H9AUMdbTLHn9svWKQp7sHw3XMheDkzV7l3Bafv-wc__tS-1D_rvHDxw16HUBFJYewbQShIqvB_KkQzypMYxw_9JG_LjQLxlyDm_EWyZC6SzMlMU_RyRbv-MLmc-ZYS_aRoS5OW-J6_5UcJT2J2pcCWSKpNZYhUXFZKMbq0OjeTm56lg58tigcMGZlzN4RVJM0UceAAY9d5ca-DBn3KeXhou0KwZsiliLymX8Ctb9aOP378iXs9CbDwWzQH903YLdQy-hpjzOo5suVOqdEIOcX5v9_AQZDryI |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=IEEE+Symposium+Conference+Record+Nuclear+Science+2004&rft.atitle=Response+of+SOI+bipolar+transistors+exposed+to+%2Fspl+gamma%2F-rays+under+different+dose+rate+and+bias+conditions&rft.au=Ratti%2C+L.&rft.au=Manghisoni%2C+M.&rft.au=Oberti%2C+E.&rft.au=Re%2C+V.&rft.date=2004-01-01&rft.pub=IEEE&rft.isbn=9780780387003&rft.issn=1082-3654&rft.eissn=2577-0829&rft.volume=2&rft.spage=756&rft.epage=760+Vol.+2&rft_id=info:doi/10.1109%2FNSSMIC.2004.1462320&rft.externalDocID=1462320 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1082-3654&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1082-3654&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1082-3654&client=summon |