Response of SOI bipolar transistors exposed to /spl gamma/-rays under different dose rate and bias conditions

• Published in: IEEE Symposium Conference Record Nuclear Science 2004 Vol. 2; pp. 756 - 760 Vol. 2
• Main Authors: Ratti, L., Manghisoni, M., Oberti, E., Re, V., Speziali, V., Traversi, G., Fallica, G., Modica, R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2004
• Subjects: BiCMOS integrated circuits; Bipolar transistors; Insulation; Ionization; Performance evaluation; Radiation detectors; Readout electronics; Silicon on insulator technology; Space technology; Testing
• DOI: 10.1109/NSSMIC.2004.1462320
• ISBN: 9780780387003; 0780387007
• ISSN: 1082-3654

This work is devoted to the analysis of /spl gamma/-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology. Such a process is currently being investigated in order to assess its suitability for use in radiation-resistant applications, namely in the design of readout electronics for radiation detectors in high energy physics experiments and for operation in the space environment. Possible sensitivity to low dose-rate was tested by exposing the devices to /spl gamma/-ray sources with different activities. High dose rate irradiations were performed with the devices biased in different operating regions in order to evaluate the effects of bias conditions on the device sensitivity to radiation.