Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy

We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.

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Published inConference on Lasers and Electro-Optics, 2004. (CLEO) Vol. 1; p. 2 pp. vol.1
Main Authors Elarde, V.C., Swint, R.B., Yeoh, T.S., Coleman, J.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Chemical vapor deposition
Electron beams
Epitaxial growth
Fabrication
Gallium arsenide
Indium gallium arsenide
Organic chemicals
Photoluminescence
Quantum dots
US Department of Transportation
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Abstract We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.
AbstractList We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.
Author Coleman, J.J.
Elarde, V.C.
Swint, R.B.
Yeoh, T.S.
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  organization: Illinois Univ., Urbana, IL, USA
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  givenname: J.J.
  surname: Coleman
  fullname: Coleman, J.J.
  organization: Illinois Univ., Urbana, IL, USA
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Snippet We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective...
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StartPage 2 pp. vol.1
SubjectTerms Chemical vapor deposition
Electron beams
Epitaxial growth
Fabrication
Gallium arsenide
Indium gallium arsenide
Organic chemicals
Photoluminescence
Quantum dots
US Department of Transportation
Title Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy
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