New large area PECVD-system for a-SiN:H deposition at 13.56 MHZ

In the last years a-SiN/sub x/:H (abbr. "SiN" in this work) has become increasingly important for solar cell manufacturing, because of its unique ability to act as an antireflection coating (AR-coating) and as a passivation layer. A parallel-plate PECVD system constructed by Centrotherm in...

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Bibliographic Details
Published in3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of Vol. 2; pp. 1515 - 1518 Vol.2
Main Authors Kenanoglu, A., Borchert, D., Ballif, C., Peters, S., Zerres, T., Rinio, M., Huljic, D.M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Frequency
Hydrogen
Manufacturing
Passivation
Photovoltaic cells
Plasma temperature
Production systems
Silicon compounds
Solar energy
Solar power generation
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Summary:In the last years a-SiN/sub x/:H (abbr. "SiN" in this work) has become increasingly important for solar cell manufacturing, because of its unique ability to act as an antireflection coating (AR-coating) and as a passivation layer. A parallel-plate PECVD system constructed by Centrotherm in co-operation with Fraunhofer ISE is installed in the pilot line production for multicrystalline solar cells in Gelsenkirchen . In contrast to 40 kHz generators often used for SiN deposition in commercial system, this device is working with the standard excitation frequency of 13.56 MHz. Higher frequencies are supposed to introduce lower damage to the substrate surface during the deposition. In this work, we show that this system can be used for the deposition of SiN AR-coating layers for solar cell production as well as for high throughput deposition of high-quality surface passivation layers.
ISBN:4990181603
9784990181604