A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications

A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM's 47 GHz f/sub T/ SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power...

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Bibliographic Details
Published inIEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 pp. 667 - 670
Main Authors Rippke, I., Duster, J., Kornegay, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
BiCMOS integrated circuits
Germanium silicon alloys
Linearity
Mobile handsets
Multiaccess communication
Power amplifiers
Power generation
Silicon germanium
Telephone sets
Transmitters
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Summary:A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM's 47 GHz f/sub T/ SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power with 30% PAE and excellent linearity. The power amplifier draws 42 mA of quiescent current from a 3.3 V source. The fabricated circuit occupies a die area of 1.8 mm /spl times/ 1.25 mm, offering at least 10/spl times/ improvement in chip/board area over current designs, allowing for increased levels of transmitter integration.
ISBN:0780376943
9780780376946
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2003.1214035