Enhanced Device Performance of \text-based Inverted Light-Emitting Diodes with Sulfobetaine

• Published in: 2024 22nd International Conference on Optical Communications and Networks (ICOCN) pp. 1 - 3
• Main Authors: Yuan, Wanru, Dong, Qianmin, Si, Junjie, Zhao, Hong, Wang, Guanghua, Zhang, Jie, Liu, Zugang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 26.07.2024
• Subjects: additive; defect passivation; inverted green perovskite LED; Light emitting diodes; Metals; Performance evaluation; Perovskites; Radiative recombination; Semiconductor materials
• DOI: 10.1109/ICOCN63276.2024.10648478

The metal halide perovskites have become the most concerned semiconductor materials due to their excellent optoelectronic properties such as high absorption coefficient, high carrier mobility, long carrier diffusion length and low defect density. However, compared with the rapid improvement of the efficiency of perovskite LED devices, the progress in stability of perovskite LEDs is still lagging behind. Inverted iodide-based perovskite LEDs containing ZnO-based electron transport layer are with high device efficiency and long device lifetime, but the device efficiency and working stability of bromide-based perovskite LED still face great challenges. In this work, a dipole molecular stabilizer (sulfobetaine 10) was introduced into \mathbf{FAPbBr}_{\mathbf{3}} perovskites to passivate the surface defects of perovskites, and produce high quality perovskite films. An inverted green perovskite LED with a peak EQE of 10.89% and a half lifetime of 3.6 min at \mathbf{3600}\ \mathbf{cd}/\mathbf{m}^{\mathbf{2}} (at \mathbf{20}\mathbf{mA}/\mathbf{cm}^{\mathbf{2}} continuous current density) has been realized.