S-band CMOS Buffer Amplifier with Integrated Temperature Sensor

• Published in: 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM) pp. 490 - 493
• Main Authors: Borisov, Danil V., Shusharina, Kristina E., Kokolov, Andrey A., Khojikov, Dias V., Sheyerman, Feodor I.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 28.06.2024
• Subjects: buffer amplifier; Circuits; CMOS; Power amplifiers; Power demand; S-band; temperature compensation; Temperature distribution; temperature sensor; Temperature sensors; Transistors; Voltage
• DOI: 10.1109/EDM61683.2024.10615154

This paper presents the results of the S-band buffer amplifier design with an integrated temperature sensor based on 180 nm CMOS technology. Existing methods of gain temperature compensation are reviewed, cascade and cascode amplification circuits are compared. The operating frequency range of the device is \mathbf{2 - 4} \mathbf{~ G H z}. Gain under normal conditions is 20.5 dB, reflection coefficients from the input/output ports are better than - 10 dB and output power at 1 dB compression level is 11.51 dBm. The temperature sensor is based on substrate bipolar PNP transistors. Sensor's operating temperature range is from -40{ }^{\circ} \mathrm{C} to +80{ }^{\circ} \mathrm{C}. The proportional to absolute temperature (PTAT) voltage of the temperature sensor is used as a bias voltage source for the first amplifier stage. Power consumption of the entire circuit is \mathbf{1 0 3. 3 2} \mathbf{~ m W}, chip area is 1.7 \mathbf{m m}^{2}. The main advantage of the proposed solution is no need of additional external components or circuits for the temperature compensation.