Effects of Process Parameters on \mathrm}2}3 Fabricated by MBE, HVPE, and MOCVD

• Published in: 2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S) Vol. 1; pp. 1 - 5
• Main Authors: Ayalasomayajula, Mukund, Balakrishnan, Vasanth, Khurana, Mohit Ravi, Chaudhary, Prince Shiva, Bal, Sourayan Basu
• Format: Conference Proceeding
• Language: English
• Published: IEEE 08.06.2024
• Subjects: beta - \mathrm{G}{\mathrm{a}}_2{\mathrm{O}}_3; comparative study; Conductivity; HVPE; MBE; MOCVD; Molecular beam epitaxial growth; Photonic band gap; process optimization; Production; Temperature; Thermal conductivity; Wide band gap semiconductors
• DOI: 10.1109/ICIC3S61846.2024.10603354

This study investigates Ga2O3, a promising wide bandgap semiconductor, amid the semiconductor industry's quest for high-performance, cost-effective devices. Ga2O3's various polymorphs, notably \beta -Ga2O3, showcase a wide bandgap, enabling UV transparency crucial for diverse applications. While \beta -Ga2O3's fabrication via melt-growth techniques distinguishes it from other phases, its high electron mobility and controllable electrical conductivity position it as a potential GaN alternative, despite its lower thermal conductivity. This paper delves into deposition techniquesMBE, HVPE, and MOCVD-unveiling distinct approaches and challenges. MBE's ultra-high vacuum conditions encounter phase stability issues addressed through compound sources, while HVPE, known for high growth rates, adopts thermodynamically determined precursors for optimal growth. MOCVD, though slower, benefits from modified setups to enhance growth rates. Emphasizing Ga2O3's wide bandgap and exploring its deposition techniques, this study offers critical insights, propelling advancements in semiconductor technology for high-bandgap materials.