Integration of high-performance, low-leakage and mixed signal features into a 100 nm CMOS technology
Low voltage operation in sub-0.25 /spl mu/m requirements mean that the simultaneous integration of all components on a single chip - high performance, low leakage and mixed-signal components - is crucial. In this paper, we present the successful integration of a low leakage gate-dielectric using a t...
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Published in | 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) pp. 62 - 63 |
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Main Authors | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2002
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Subjects | |
Online Access | Get full text |
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