Electric Field Modulation in the Channel by Lateral Thickness Distribution of High- \textit Films Formed on GaN HEMTs to Improve Breakdown Voltage

• Published in: IEEE transactions on electron devices pp. 1 - 6
• Main Authors: Miyamoto, Yasuyuki, Makiyama, Kozo
• Format: Journal Article
• Language: English
• Published: IEEE 14.03.2023
• Subjects: Breakdown voltage; Electric fields; gallium nitride (GaN) high electron mobility transistor (HEMT); high-<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> textit{k}</tex-math> </inline-formula> film; High-k dielectric materials; Impact ionization; lateral thickness distribution; Logic gates; MODFETs; simulation; Tunneling

High breakdown voltage owing to a quasi-uniform electric field, upon loading a high-<inline-formula> <tex-math notation="LaTeX">\textit{k}</tex-math> </inline-formula> film in the gate-drain region, was recently investigated. However, the uniform high-<inline-for...