Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

• Published in: Journal of applied physics Vol. 136; no. 3
• Main Authors: Chakravorty, Anusmita, Boulle, Alexandre, Debelle, Aurélien, Manna, Gouranga, Saha, Pinku, Kanjilal, D., Kabiraj, Debdulal
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 2024
• Subjects: Mechanics; Mechanics of materials; Physics

Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct di...