Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN[sub.x] Stress-Engineering Technique
In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN[sub.x] stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective...
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Published in | Nanomaterials (Basel, Switzerland) Vol. 14; no. 18 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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01.09.2024
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Abstract | In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN[sub.x] stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiN[sub.x] passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiN[sub.x] passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (f [sub.t]) and maximum oscillation frequency (f [sub.max]) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiN[sub.x] passivation was markedly superior to that of the devices with stress-free SiN[sub.x] passivation. These results confirm the substantial potential of the SiN[sub.x] stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems. |
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AbstractList | In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN[sub.x] stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiN[sub.x] passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiN[sub.x] passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (f [sub.t]) and maximum oscillation frequency (f [sub.max]) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiN[sub.x] passivation was markedly superior to that of the devices with stress-free SiN[sub.x] passivation. These results confirm the substantial potential of the SiN[sub.x] stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems. |
Audience | Academic |
Author | Du, Fangzhou Li, Mujun Xiong, Zilong Zhang, Yi Wang, Xiaohui Deng, Chenkai Wen, Kangyao Wang, Qing Tao, Nick Hu, Qiaoyu Tang, Chuying Yu, Hongyu Jiang, Yang Li, Wenmao Wang, Peiran |
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Title | Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN[sub.x] Stress-Engineering Technique |
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