OHMIC ELECTRODE OF N-TYPE CUBIC BORON NITRIDE AND METHOD OF FORMING THE SAME

• Main Authors: YOSHIDA, KATSUHITO, TSUJI, KAZUWO
• Format: Patent
• Language: English; Japanese
• Published: 13.06.1991
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An ohmic electrode of n-type cubic boron nitride. The ohmic electrode consists of at least two thin films, the first layer being composed of at least one alloy selected from the group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy and the second layer being composed of at least one metal...