COPOLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD

• Main Authors: KAWAUE Akiya, UMEDA Masaya
• Format: Patent
• Language: English; French; Japanese
• Published: 03.10.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

The purpose of the present invention is to provide a copolymer and a positive resist composition, which make it possible to form a resist pattern that has a wide light exposure margin and a favorable shape. A copolymer according to the present invention is characterized by comprising a monomer unit...