SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

• Main Authors: HORIKAWA Tomu, TAKEHARA Masahiko, KONDO Yoshie, MAETO Keisuke, MIYAMOTO Hiroshi, NAKAZAWA Tatsuya, OGAWA Kohei, HOSOI Takuya, YAMADA Takashi, KIMURA Saori
• Format: Patent
• Language: English; French; Japanese
• Published: 29.08.2024
• Subjects: ALLOYS; CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; PERFORMING OPERATIONS; POWDER METALLURGY; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WORKING METALLIC POWDER

The purpose of the present invention is to provide a sputtering target having high composition uniformity. This sputtering target is formed from a noble metal alloy. The noble metal alloy is formed from 5 or more species of noble metal elements. In an X-ray diffraction spectrum, the number of peaks observed within a range of the diffraction angle 2θ between 38° and 44° is 1. Le but de la présente invention est de fournir une cible de pulvérisation cathodique ayant une uniformité de composition élevée. Cette cible de pulvérisation cathodique est formée à partir d'un alliage de métal noble. L'alliage de métal noble est formé à partir de 5 espèces ou plus d'éléments de métal noble. Dans un spectre de diffraction des rayons X, le nombre de pics observés dans une plage de l'angle de diffraction 2θ entre 38° et 44° est de 1. 高度な組成の均一性を備えるスパッタリングターゲットを提供することを目的とする。貴金属合金からなるスパッタリングターゲットであって、前記貴金属合金は、５種以上の貴金属元素からなり、かつＸ線回折スペクトルにおける回折角度２θが３８～４４°の範囲に観察されるピークの本数が１である、スパッタリングターゲット。