SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Authors: UETA, Shunsaku, TAKAOKA, Hiroki
• Format: Patent
• Language: English; French; Japanese
• Published: 18.01.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A silicon carbide substrate according to the present invention has a main surface. The main surface comprises: a central part; and an outer peripheral part that is positioned 10 mm away from the outer peripheral edge of the main surface toward the central part. The value obtained by subtracting the...