METHOD FOR FORMING PEROVSKITE LAYER
The present invention relates to a method for forming a perovskite layer on a silicon layer, the method comprising the steps of: depositing a perovskite inorganic layer on the silicon layer through a vapor deposition process; and coating a perovskite organic layer on the inorganic layer through a so...
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12.01.2023
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Abstract | The present invention relates to a method for forming a perovskite layer on a silicon layer, the method comprising the steps of: depositing a perovskite inorganic layer on the silicon layer through a vapor deposition process; and coating a perovskite organic layer on the inorganic layer through a solution process, wherein the inorganic layer is formed by sequentially or simultaneously depositing at least three inorganic halogen compounds including different halogen elements.
La présente invention concerne un procédé de formation d'une couche pérovskite sur une couche de silicium, le procédé comprenant les étapes consistant à : déposer une couche inorganique pérovskite sur la couche de silicium par un processus de dépôt en phase vapeur ; et appliquer un revêtement d'une couche organique pérovskite sur la couche inorganique par un processus en solution, la couche inorganique étant formée par dépôt séquentiel ou simultané d'au moins trois composés halogènes inorganiques comprenant différents éléments halogènes.
본 발명은 실리콘층 상부에 페로브스카이트층을 형성하기 위한 방법에 있어서, 기상 증착 공정에 의해 상기 실리콘층 상부에 페로브스카이트 무기물층을 증착하는 단계; 및 용액 공정에 의해 상기 무기물층 상부에 페로브스카이트 유기물층을 코팅하는 단계;를 포함하고, 상기 무기물층은 서로 다른 할로겐 원소를 포함하는 3종 이상의 무기할로겐화합물들이 순차로 또는 동시에 증착되어 형성되는 것을 특징으로 하는 페로브스카이트층을 형성하기 위한 방법에 관한 것이다. |
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AbstractList | The present invention relates to a method for forming a perovskite layer on a silicon layer, the method comprising the steps of: depositing a perovskite inorganic layer on the silicon layer through a vapor deposition process; and coating a perovskite organic layer on the inorganic layer through a solution process, wherein the inorganic layer is formed by sequentially or simultaneously depositing at least three inorganic halogen compounds including different halogen elements.
La présente invention concerne un procédé de formation d'une couche pérovskite sur une couche de silicium, le procédé comprenant les étapes consistant à : déposer une couche inorganique pérovskite sur la couche de silicium par un processus de dépôt en phase vapeur ; et appliquer un revêtement d'une couche organique pérovskite sur la couche inorganique par un processus en solution, la couche inorganique étant formée par dépôt séquentiel ou simultané d'au moins trois composés halogènes inorganiques comprenant différents éléments halogènes.
본 발명은 실리콘층 상부에 페로브스카이트층을 형성하기 위한 방법에 있어서, 기상 증착 공정에 의해 상기 실리콘층 상부에 페로브스카이트 무기물층을 증착하는 단계; 및 용액 공정에 의해 상기 무기물층 상부에 페로브스카이트 유기물층을 코팅하는 단계;를 포함하고, 상기 무기물층은 서로 다른 할로겐 원소를 포함하는 3종 이상의 무기할로겐화합물들이 순차로 또는 동시에 증착되어 형성되는 것을 특징으로 하는 페로브스카이트층을 형성하기 위한 방법에 관한 것이다. |
Author | JUNG, Kwan Wook |
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DocumentTitleAlternate | PROCÉDÉ DE FORMATION D'UNE COUCHE PÉROVSKITE 페로브스카이트 층을 형성하기 위한 방법 |
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Snippet | The present invention relates to a method for forming a perovskite layer on a silicon layer, the method comprising the steps of: depositing a perovskite... |
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Title | METHOD FOR FORMING PEROVSKITE LAYER |
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