SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
The purpose of the present invention is, in an RC-IGBT, to provide a semiconductor device that can suppress a snapback phenomenon when the IGBT is on, and hole injection from the IGBT region to a diode region when the diode is conductive, using a simple structure. The semiconductor device having an...
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Main Author | |
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Format | Patent |
Language | English French Japanese |
Published |
30.11.2023
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Subjects | |
Online Access | Get full text |
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