SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

The purpose of the present invention is, in an RC-IGBT, to provide a semiconductor device that can suppress a snapback phenomenon when the IGBT is on, and hole injection from the IGBT region to a diode region when the diode is conductive, using a simple structure. The semiconductor device having an...

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Bibliographic Details
Main Author SHIRAISHI Masaki
Format Patent
LanguageEnglish
French
Japanese
Published 30.11.2023
Subjects
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