ETCHING SOLUTION COMPOSITION, PRODUCTION METHOD FOR SAID ETCHING SOLUTION COMPOSITION, AND ETCHING METHOD USING SAID ETCHING SOLUTION COMPOSITION

• Main Authors: INAZUMI, Hiroki, SHIMIZU, Toshikazu, YOSHIDA, Yuki
• Format: Patent
• Language: English; French; Japanese
• Published: 10.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The present invention addresses the problem of providing an etching solution composition that imparts a good etched surface shape to a metal to be etched at a controlled etch rate.　The present invention relates to an etching solution composition obtained by blending at least (A) nitric acid, (B) acetic acid, (C) a phosphorous compound, and (D) water, wherein the water concentration after blending is at most 3.0 M. La présente invention aborde le problème de la fourniture d'une composition de solution d'attaque qui confère une bonne forme de surface attaquée chimiquement à un métal à attaquer à une vitesse d'attaque commandée.　La présente invention concerne une composition de solution d'attaque obtenue par mélange d'au moins (A) de l'acide nitrique, (B) de l'acide acétique, (C) un composé phosphoré et (D) de l'eau, la concentration en eau après mélange étant d'au plus 3,0 M. 本発明の課題は、エッチング対象となる金属に対して抑制されたエッチング速度で良好なエッチング表面形状を与えるエッチング液組成物を提供することにある。　本発明は、（Ａ）硝酸、（Ｂ）酢酸、（Ｃ）りん化合物および（Ｄ）水が少なくとも配合されてなり、配合後の水濃度が３．０Ｍ以下であるエッチング液組成物に関する。