NEGATIVE DEVELOPMENT PHOTORESIST MODEL OPTIMIZATION METHOD

The present invention relates to the technical field of semiconductors, and in particular to a negative development photoresist model optimization method. The method comprises the following steps: obtaining an initial negative development photoresist model; on the basis of a light field distribution...

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Bibliographic Details
Main Author GAO, Shijia
Format Patent
LanguageChinese
English
French
Published 20.07.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present invention relates to the technical field of semiconductors, and in particular to a negative development photoresist model optimization method. The method comprises the following steps: obtaining an initial negative development photoresist model; on the basis of a light field distribution in the initial negative development photoresist model and an acid concentration in a photoresist, establishing light field distribution-based distribution function S of the acid concentration in the photoresist; establishing concentration distribution function D of a development solution on the basis of distribution function S of the acid concentration in the photoresist; constructing a development solution concentration diffusion calculation formula R according to the concentration distribution function D of the development solution, said formula being used for calculating diffusion results for development solutions having different concentrations; using the development solution concentration diffusion calculatio
Bibliography:Application Number: WO2022CN115976